Current measuring instrument DX series

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The essence of the Hall effect: When the carriers in the solid material move in the applied magnetic field, the trajectory shifts due to the Lorentz force, and charge accumulation occurs on both sides of the material, forming an electric field perpendicular to the current direction; Finally, the Lorentz force of the carrier is balanced with the electric field repulsion, thus establishing a stable potential difference on both sides, that namely the Hall voltage. The experimental results of the Dexinmag series Hall effect test systems are automatically calculated by the software at the same time, such as Bulk Carrier Concentration, Sheet Carrier Concentration, Mobility, Resistivity, Hall Coefficient, Magnetoresistance, and other important parameters. Carrier concentration 10³cm⁻³ - 10²³cm⁻³ Mobility - 0 .1 cm²/ volt*sec - 10⁸cm²/ volt*sec Resistivity range 10⁻⁷ Ohm*cm - 10¹² Ohm*cm Hall voltage - 1 uV - 3V Hall coefficient 10⁻⁵ - 10²⁷cm³/ C Testable material type - Semiconductor material - SiGe, SiC, InAs, InGaAs, InP,AlGaAs, HgCdTe and ferrite materials etc. low resistance material - Graphene, metals, transparent oxides, weakly magnetic semiconductor materials, TMR materials, etc. high resistance material - Semi-insulating GaAs, GaN, CdTe, etc. Material Conductive Particles - Type P and Type N testing of materials